Bithear a’ cleachdadh garnets GGG/SGGG/NGG airson epitaxy.Tha fo-stratan sònraichte airson film magneto-optigeach. air a chuir ann an raon magnetach.
Tha substrate SGGG sàr-mhath airson a bhith a’ fàs filmichean epitaxial garnet iarann an àite bismuth, na stuth math airson YIG, BiYIG, GdBIG.
Tha e math feartan corporra agus meacanaigeach agus seasmhachd ceimigeach.
Iarrtasan:
YIG, film mòr epitaxy;
Innealan microwave;
GGG a chur na àite
Feartan:
Cumadh | (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12 |
Structar Crystal | Ciùbach: a = 12.480 Å , |
Molecular wDielectric seasmhach | 968,096 |
Rubha leaghaidh | ~1730 oC |
Dùmhlachd | ~ 7.09 g/cm3 |
cruas | ~ 7.5 (mohn) |
Clàr-innse ath-bheòthail | 1.95 |
Seasmhach dielectric | 30 |
Tangent call dielectric (10 GHz) | caib.3.0 * 10_4 |
Modh fàs criostail | Czochralski |
Stiùireadh fàs criostail | <111> |
Paramadairean Teicnigeach:
Treòrachadh | <111> <100> taobh a-staigh ±15 arc min |
Saobhadh aghaidh tonn | <1/4 tonn@632 |
Tolerance trast-thomhas | ±0.05mm |
Fulangas Faid | ±0.2mm |
Chamfer | 0.10mm@45º |
Flatness | <1/10 tonn aig 633nm |
Co-shìnteachd | < 30 arc diog |
Perpendicularity | <15 arc min |
Càileachd Surface | 10/5 Scratch/Dig |
Fosgladh soilleir | >90% |
Meudan mòra de chriostalan | 2.8-76 mm ann an trast-thomhas |